VS-60CPU06-F, vs-60cpu06-n3 www.vishay.com vishay semiconductors revision: 26-jan-12 1 document number: 94658 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ultrafast rectifier, fred pt ? , 2 x 30 a features ? ultrafast recovery time ? low forward voltage drop ? low leakage current ? 175 c operating junction temperature ? compliant to rohs directive 2002/95/ec ? designed and qualified according to jedec-jesd47 ? halogen-free according to iec 61249-2-21 definition (-n3 only) description vs-60cpu06... series are the state of the art ultrafast recovery rectifiers designed with optimized performance of forward voltage drop and ul trafast recovery time. the planar structure and the pl atinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. these devices are intended for use in the output rectification stage of smps, welding, ups, dc/dc converters as well as freewheeling diodes in low voltage inverters and chopper motor drives. their extremely optimized stored charge and low recovery current minimize the switch ing losses and reduce over dissipation in the switch ing element and snubbers. product summary package to-247ac i f(av) 2 x 30 a v r 600 v v f at i f 1.65 v t rr typ. 27 ns t j max. 175 c diode variation common cathode anode 2 13 2 base common cathode 2 common cathode anode 1 to-247ac absolute maximum ratings parameter symbol test conditions values units repetitive peak reverse voltage v rrm 600 v average rectified forward current per leg i f(av) 30 a per device rated v r , t c = 137 c 60 non-repetitive peak surge current per leg i fsm t j = 25 c 300 peak repetitive forward current per leg i fm rated v r , square wave, 20 khz, t c = 137 c 60 operating junction and storage temperatures t j , t stg - 65 to 175 c electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units breakdown voltage, blocking voltage v br , v r i r = 100 a 600 - - v forward voltage v f i f = 30 a - 1.31 1.65 i f = 30 a, t j = 150 c -1.11.4 reverse leakage current i r v r = v r rated -0.0250 a t j = 150 c, v r = v r rated - 30 250 junction capacitance c t v r = 200 v -22-pf series inductance l s measured lead to lead 5 mm from package body - 3.5 - nh
VS-60CPU06-F, vs-60cpu06-n3 www.vishay.com vishay semiconductors revision: 26-jan-12 2 document number: 94658 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - typical forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage dynamic recovery characteristics (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units reverse recovery time t rr i f = 1.0 a, di f /dt = 100 a/s, v r = 30 v -2735 ns t j = 25 c i f = 30 a di f /dt = - 200 a/s v r = 200 v -42- t j = 125 c - 110 - peak recovery current i rrm t j = 25 c -5- a t j = 125 c -11- reverse recovery charge q rr t j = 25 c - 110 - nc t j = 125 c - 630 - thermal - mechanical specifications (t j = 25 c unless otherwise noted) parameter symbol test conditions min. typ. max. units maximum junction and storage temperature range t j , t stg - 65 - 175 c thermal resistance, junction to case per leg r thjc -0.60.9 c/w thermal resistance, junction to ambient per leg r thja typical socket mount - - 70 thermal resistance, case to heatsink r thcs mounting surface, flat, smooth and greased -0.4- weight -6.0- g -0.22- oz. mounting torque 6.0 (5.0) - 12 (10) kgf cm (lbf in) marking device case style to-247ac 60cpu06 1000 10 1 0.0 1.0 1.5 2.0 2.5 i f - instantaneous forward current (a) v f - forward voltage drop (v) t j = 175 c t j = 125 c t j = 25 c 0.5 100 0 100 200 300 600 i r - reverse current (a) v r - reverse voltage (v) 0.001 0.01 0.1 1 10 100 1000 t j = 100 c t j = 175 c t j = 150 c t j = 125 c t j = 25 c t j = 50 c t j = 75 c 500 400
VS-60CPU06-F, vs-60cpu06-n3 www.vishay.com vishay semiconductors revision: 26-jan-12 3 document number: 94658 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - typical junction ca pacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward power loss characteristics 1000 100 10 0 100 200 300 600 c t - junction capacitance (pf) v r - reverse voltage (v) 500 400 0.001 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance (c/w) . single p u lse (thermal resistance) d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 0.01 0 5 10 15 20 45 allowable case temperature (c) i f(av) - average forward current (a) 100 120 140 160 180 dc see note (1) s qu are w a v e (d = 0.50) rated v r applied 25 30 35 40 01020 50 average power loss (w) i f(av) - average forward current (a) 0 10 20 30 40 50 60 rms limit d = 0.01 d = 0.02 d = 0.05 d = 0.10 d = 0.20 d = 0.50 dc 30 40
VS-60CPU06-F, vs-60cpu06-n3 www.vishay.com vishay semiconductors revision: 26-jan-12 4 document number: 94658 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 7 - typical reverse recovery time vs. di f /dt fig. 8 - typical stored charge vs. di f /dt note (1) formula used: t c = t j - (pd +pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = rated v r fig. 9 - reverse recovery parameter test circuit fig. 10 - reverse recovery waveform and definitions 1000 10 100 1000 t rr (ns) di f /dt (a/s) i f = 30 a, t j = 25 c i f = 30 a, t j = 125 c 100 100 10 000 10 100 1000 q rr (nc) di f /dt (a/s) i f = 30 a, t j = 25 c i f = 30 a, t j = 125 c 1000 irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve defined by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
VS-60CPU06-F, vs-60cpu06-n3 www.vishay.com vishay semiconductors revision: 26-jan-12 5 document number: 94658 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table ordering information (example) preferred p/n quantity per t/r minimum order quantity packaging description VS-60CPU06-F 25 500 antistatic plastic tube vs-60cpu06-n3 25 500 antistatic plastic tube links to related documents dimensions www.vishay.com/doc?95223 part marking information www.vishay.com/doc?95007 device code 2 - current rating (60 = 60 a) 1 - vishay semiconductors product 3 4 - package: p = to-247ac (modified) 5 - u = ultrafast rectifier 6 - voltage rating (06 = 600 v) 7 5 1 3 2 4 60 vs- c p u 06 6 7 -f - circuit configuration: c = common cathode - environmental digit: -f = rohs compliant and totally lead (pb)-free -n3 = halogen-free, rohs compliant and totally lead (pb)-free
outline dimensions www.vishay.com vishay semiconductors revision: 16-jun-11 1 document number: 95223 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dimensions in millimeters and inches notes (1) dimensioning and tolera ncing per asme y14.5m-1994 (2) contour of slot optional (3) dimension d and e do not include mold flas h. mold flash shall not exceed 0.127 mm (0 .005") per side. these dimensions are measu red at the outermost extremes of the plastic body (4) thermal pad contour optional with dimensions d1 and e1 (5) lead finish uncontrolled in l1 (6) ? p to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) outline conforms to jede c outline to-247 with ex ception of dimension c symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.65 5.31 0.183 0.209 d2 0.51 1.30 0.020 0.051 a1 2.21 2.59 0.087 0.102 e 15.29 15.87 0.602 0.625 3 a2 1.50 2.49 0.059 0.098 e1 13.72 - 0.540 - b 0.99 1.40 0.039 0.055 e 5.46 bsc 0.215 bsc b1 0.99 1.35 0.039 0.053 fk 2.54 0.010 b2 1.65 2.39 0.065 0.094 l 14.20 16.10 0.559 0.634 b3 1.65 2.37 0.065 0.094 l1 3.71 4.29 0.146 0.169 b4 2.59 3.43 0.102 0.135 n 7.62 bsc 0.3 b5 2.59 3.38 0.102 0.133 ? p 3.56 3.66 0.14 0.144 c 0.38 0.86 0.015 0.034 ? p1 - 6.98 - 0.275 c1 0.38 0.76 0.015 0.030 q 5.31 5.69 0.209 0.224 d 19.71 20.70 0.776 0.815 3 r 4.52 5.49 1.78 0.216 d1 13.08 - 0.515 - 4 s 5.51 bsc 0.217 bsc 0.10 a c m m e n (2) (3) (4) (4) (2) r/2 b 2 x r s d see view b 2 x e b4 3 x b 2 x b2 l c (5) l1 1 2 3 q d a a2 a a a1 c ? k b d m m a (6) ? p (datum b) fp1 d1 (4) 4 e1 0.01 b d m m view a - a thermal pad d2 dde e c c view b (b1, b3, b5) base metal c1 (b, b2, b4) section c - c, d - d, e - e (c) planting lead assignments diodes 1. - anode/open 2. - cathode 3. - anode
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